PART |
Description |
Maker |
CY7C1049CV33-12ZSXA CY7C1049CV33-12ZSXAT CY7C1049C |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
CY62148EV30LL-55ZSXET |
4-Mbit (512 K x 8) Static RAM
|
Cypress
|
CY62148EV30LL-45ZSXA |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
CY7C1049CV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
CY7C1049DV33-10VXI CY7C1049DV33-10VXIT CY7C1049DV3 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM 2M x 8 Static RAM Microwire Serial EEPROM 16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM 512K x 32 Static RAM
|
Atmel, Corp.
|
BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
CY62157ELL-45ZSXI CY62157ELL-55BVXE |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
CY62126EV30 CY62126EV30LL CY62126EV30LL-45ZSXI CY6 |
1-Mbit (64 K x 16) Static RAM Automatic power down when deselected 1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
AM41PDS3224DT10IS AM41PDS3224DT100IS AM41PDS3224DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
AM41DL3248GT45IS M41000002S M41000002L |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同步写闪存和8兆位 M中的x 8-Bit/512亩x 16位),静态存储器 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2x 16位).0伏的CMOS只,同步写闪存和8兆位 M中的x 8-Bit/512x 16位),静态存储器
|
Samsung Semiconductor Co., Ltd. Advanced Micro Devices, Inc.
|
AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|